Product Summary

The NT5SV8M16FS-75B is a four-bank Synchronous DRAM. It is organized as 2Mbit x 16 I/O x 4 Bank. The NT5SV8M16FS-75B achieves high-speed data transfer rates of up to 166MHz by employing a pipeline chip architecture that synchronizes the output data to a system clock. The NT5SV8M16FS-75B is designed to comply with all JEDEC standards set for synchronous DRAM products, both electrically and mechanically. All of the control, address, and data input/output (I/O or DQ) circuits are synchronized with the positive edge of an externally supplied clock.

Parametrics

NT5SV8M16FS-75B absolute maximum ratings: (1)VDD Power Supply Voltage: -1.0 to +4.6 V; (2)VDDQ Power Supply Voltage for Output: -1.0 to +4.6 V; (3)VIN Input Voltage: -0.3 to VDD+0.3 V; (4)VOUT Output Voltage: -0.3 to VDD+0.3 V; (5)TA Operating Temperature (ambient)Commerical: 0 to +70 ℃, Industrial: -40 to +85 ℃; (6)TSTG Storage Temperature: -55 to +150 ℃; (7)PD Power Dissipation: 1.0 W; (8)IOUT Short Circuit Output Current: 50 mA.

Features

NT5SV8M16FS-75B features: (1)Single Pulsed RAS Interface; (2)Fully Synchronous to Positive Clock Edge; (3)Four Banks controlled by BA0/BA1 (Bank Select); (4)Programmable CAS Latency: 2, 3; (5)Programmable Burst Length: 1, 2, 4, 8 or full page; (6)Programmable Wrap: Sequential or Interleave; (7)Multiple Burst Read with Single Write Option; (8)Automatic and Controlled Precharge Command; (9)Dual Data Mask for byte control (×16); (10)Auto Refresh (CBR) and Self Refresh; (11)Suspend Mode and Power Down Mode; (12)Standard Power operation; (13)Random Column Address every CK (1-N Rule); (14)Single Power Supply, either 3.3V; (15)LVTTL compatible; (16)Packages: TSOP-Type II; (17)Lead-free & Halogen-free product available.

Diagrams

NT5SV8M16FS-75B block diagram

NT5S10001BA20
NT5S10001BA20

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