(China (Mainland))
Product Summary
The MT48V8M32LFB5-8 SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. The MT48V8M32LFB5-8 is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 67,108,864-bit banks is organized as 4,096 rows by 512 columns by 32 bits. Read and write accesses to the MT48V8M32LFB5-8 are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.
Parametrics
MT48V8M32LFB5-8 absolute maximum ratings: (1)Voltage on VDD/VDDQ Supply: relative to VSS:-1V to 4.6V; (2)Voltage on Inputs, NC or I/O Balls:relative to VSS:-1V to +4.6V; (3)Operating Temperature:0 to +70℃ or -40 to +85℃; (4)Storage Temperature:-55 to +150℃.
Features
MT48V8M32LFB5-8 features: (1)Low voltage power supply; (2)Partial array self refresh power-saving mode; (3)Temperature Compensated Self Refresh (TCSR); (4)Deep power-down mode; (5)Programmable output drive strength; (6)Fully synchronous; all signals registered on positive edge of system clock; (7)Internal pipelined operation; column address can ; (8)be changed every clock cycle; (9)Internal banks for hiding row access/precharge ; (10)Programmable burst lengths: 1, 2, 4, 8, or full page; (11)Auto precharge, includes concurrent auto precharge, and auto refresh modes; (12)Self-refresh mode; standard and low power; (13)64ms, 4,096-cycle refresh; (14)LVTTL-compatible inputs and outputs; (15)Commercial and industrial temperature ranges; (16)Supports CAS latency of 1, 2, 3.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MT48V8M32LFB5-8 IT TR |
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IC SDRAM 256MBIT 125MHZ 90VFBGA |
Data Sheet |
Negotiable |
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MT48V8M32LFB5-8 TR |
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IC SDRAM 256MBIT 125MHZ 90VFBGA |
Data Sheet |
Negotiable |
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