(China (Mainland))
Product Summary
The IRF640SPBF is an N-channel Power MOSFET. It provides the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRF640SPBF absolute maximum ratings: (1)continuous drain current, VGS @ 10 V Tc = 25 ℃: 18 A;(2)continuous drain current, VGS @ 10 V Tc = 100 ℃: 11 A;(3)pulsed drain current: 72 A;(4)linear derating factor: 1.0 W/℃;(5)gate-to-source voltage: ±20 V;(6)single pulse avalanche energy: 580 mJ;(7)avalanche current: 18 A;(8)repetitive avalanche energy: 13 mJ;(9)peak diode recovery dv/dt: 5.0 V/ns;(10)operating junction and storage temperature range: -55 ℃ to +150 ℃.
Features
IRF640SPBF features: (1)Surface Mount; (2)Low-Profile Through-Hole; (3)Available in Tape and Reel; (4)Dynamic dV/dt Rating; (5)150℃ Operating Temperature; (6)Fast Switching; (7)Fully Avalanche Rated; (8)Lead (Pb)-free Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRF640SPBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 18 Amp |
Data Sheet |
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Pricing (USD) |
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