(China (Mainland))
Product Summary
The K40T120 is an IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode.
Parametrics
K40T120 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200V; (2)DC collector current TC = 25℃: 75A; (3)TC = 100℃: 40A; (4)Pulsed collector current, tp limited by Tjmax ICpuls: 105A; (5)Turn off safe operating area VCE≤1200V, Tj≤150℃: 105A; (6)Diode forward current TC = 25℃: 80A; (7)TC = 100℃: 40A; (8)Diode pulsed current, tp limited by Tjmax IFpuls: 105A; (9)Gate-emitter voltage VGE: ±20V; (10)Short circuit withstand time2): 10μs; (11)Power dissipation TC = 25℃: 270W; (12)Operating junction temperature Tj: -40 to +150℃; (13)Storage temperature Ts tg -55 to +150℃.
Features
K40T120 features: (1)Best in class TO247; (2)Short circuit withstand time 10μs; (3)Designed for: Frequency Converters, Uninterrupted Power Supply; (4)Trench and Fieldstop technology for 1200 V applications offers: very tight parameter distribution, high ruggedness, temperature stable behavior; (5)NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat); (6)Low EMI; (7)Low Gate Charge; (8)Very soft, fast recovery anti-parallel EmCon HE diode; (9)Qualified according to JEDEC1 for target applications; (10)Pb-free lead plating; RoHS compliant.
Diagrams
